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| Transistor 2SC3929, 2SC3929A Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1531 and 2SA1531A Unit: mm s Features q q q 0.65 Low noise voltage NV. High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25C) Ratings 35 55 35 55 5 100 50 150 150 -55 ~ +150 Unit V 2.10.1 0.425 1.250.1 0.425 0.65 1 2.00.2 1.30.1 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SC3929 2SC3929A 2SC3929 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol 2 0.2 0.90.1 emitter voltage 2SC3929A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 0 to 0.1 V V mA mA mW C C 0.70.1 0.20.1 1:Base 2:Emitter 3:Collector EIAJ:SC-70 S-Mini Type Package Marking symbol : S(2SC3929) T(2SC3929A) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SC3929 2SC3929A 2SC3929 2SC3929A (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE* VCE(sat) VBE NV fT Conditions VCB = 10V, IE = 0 VCE = 10V, IB = 0 IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCE = 5V, IC = 2mA IC = 100mA, IB = 10mA VCE = 1V, IC = 100mA VCE = 10V, IC = 1mA, GV = 80dB Rg = 100k, Function = FLAT VCB = 5V, IE = -2mA, f = 200MHz 80 0.7 35 55 35 55 5 180 700 0.6 1 150 V V mV MHz min typ max 100 1 Unit nA A V 0.15-0.05 +0.1 0.3-0 +0.1 V V Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Noise voltage Transition frequency *1h FE1 Rank classification Rank hFE R 180 ~ 360 SR TR S 260 ~ 520 SS TS T 360 ~ 700 ST TT Marking Symbol 2SC3929 2SC3929A 1 Transistor PC -- Ta 240 160 140 200 2SC3929, 2SC3929A IC -- VCE Ta=25C 160 VCE=5V Ta=25C 140 IB=350A 300A 100 250A 80 60 40 20 200A 150A 100A IC -- I B Collector power dissipation PC (mW) Collector current IC (mA) 120 Collector current IC (mA) 120 100 80 60 40 20 0 160 120 80 40 50A 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0.1 0.2 0.3 0.4 0.5 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (mA) IC -- VBE Collector to emitter saturation voltage VCE(sat) (V) 120 25C 100 VCE=5V 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 VCE(sat) -- IC IC/IB=10 720 hFE -- IC VCE=5V Forward current transfer ratio hFE 600 Ta=75C 480 25C 360 -25C 240 Collector current IC (mA) Ta=75C 80 -25C 60 40 25C Ta=75C 20 120 -25C 0 0 0.4 0.8 1.2 1.6 2.0 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 Base to emitter voltage VBE (V) Collector current IC (mA) Collector current IC (mA) fT -- IE 500 Cob -- VCB Collector output capacitance Cob (pF) VCB=5V Ta=25C 20 IE=0 f=1MHz Ta=25C 160 140 NV -- VCE IC=1mA GV=80dB Function=FLAT Rg=100k 100 80 60 40 20 22k Transition frequency fT (MHz) Noise voltage NV (mV) 400 16 120 300 12 200 8 100 4 4.7k 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 0 0.1 0 0.3 1 3 10 30 100 1 3 10 30 100 Emitter current IE (mA) Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) 2 Transistor NV -- VCE 300 Rg=100k 160 140 VCE=10V GV=80dB Function=FLAT 2SC3929, 2SC3929A NV -- IC 300 VCE=10V GV=80dB Function=RIAA NV -- IC Noise voltage NV (mV) Noise voltage NV (mV) IC=1mA GV=80dB Function=RIAA 180 120 100 80 60 22k 40 4.7k 20 0 0.01 Rg=100k Noise voltage NV (mV) 240 240 180 120 22k 60 4.7k 120 Rg=100k 60 22k 4.7k 0 1 3 10 30 100 0.03 0.1 0.3 1 0 0.01 0.03 0.1 0.3 1 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) NV -- Rg 160 140 VCE=10V GV=80dB Function=FLAT 300 NV -- Rg VCE=10V GV=80dB Function=RIAA Noise voltage NV (mV) 120 100 80 IC=1mA 60 40 20 0 1 3 10 30 100 0.5mA 0.1mA Noise voltage NV (mV) 240 180 IC=1mA 120 0.5mA 60 0.1mA 0 1 3 10 30 100 Signal source resistance Rg (k) Signal source resistance Rg (k) 3 |
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